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2SC3265 - Silicon NPN Transistor

Key Features

  • High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range www. DataSheet4U. com Symbol VCBO VCEO VEBO.

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Datasheet Details

Part number 2SC3265
Manufacturer Guangdong Kexin Industrial
File Size 65.69 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3265 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Silicon NPN Epitaxial 2SC3265 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range www.DataSheet4U.