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2SC3265
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications Power Switching Applications
• High DC current gain: hFE (1) = 100 to 320 • Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA) • Complementary to 2SA1298
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
30 25 5 800 160 200 150 −55 to 150
V V V mA mA mW °C °C
Note: Using continuously under heavy loads (e.g.
2SC3265 Datasheet
