2SC3267
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
- plementary to 2SA1297
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
20 20 6 2 0.5 400 150 -55~150
Unit
V V V A A m W °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 m A, IB = 0
V (BR) EBO IE = 0.1 m A, IC = 0 h FE (1)...
