2SC3268
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
- NF = 1.7d B, |S21e|2 = 15.0d B (f = 500 MHz)
- NF = 2d B, |S21e|2 = 9.5d B (f = 1000 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IB IC PC PC (Note 1)
17 12 3 30 70 300
V V V m A m A m W m W
Junction temperature Storage temperature range
Tj 125 °C
Tstg
-55~150
°C
Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 mmt
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.052 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition f T ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 m A VCE = 10 V, IC = 20 m A, f = 500 MHz VCE = 10 V, IC = 20 m A, f = 1 GHz VCE = 10 V,...
