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KRF1302S - HEXFET Power MOSFET

Key Features

  • Advanced Process Technology Ultra Low On-Resistance + 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 175 Operating Temperature +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Fast Switching + 0 .2 5 .2 8 -0 .2 Repetitive Avalanche Allowed up to Tjmax 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous.

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Datasheet Details

Part number KRF1302S
Manufacturer Guangdong Kexin Industrial
File Size 77.20 KB
Description HEXFET Power MOSFET
Datasheet download datasheet KRF1302S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF1302S TO-263 Features Advanced Process Technology Ultra Low On-Resistance + 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 175 Operating Temperature +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Fast Switching + 0 .2 5 .2 8 -0 .2 Repetitive Avalanche Allowed up to Tjmax 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.