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KRF8910 - HEXFET Power MOSFET

Key Features

  • Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Ta = 25 Continuous Drain Current,VGS @ 10V TC = 70 Pulsed Drain Current.
  • 1 Maximum Power Dissipation Ta = 25 Maximum Power Dissipation Ta = 70 Linear Derating Factor Operating Junction and Storage Temperature Range Junction-to-Drain Lead Maximum Junction-to-Ambient.
  • 2,3 Single Pulse Avalanche Energy.
  • 4 Avalanche Current.
  • 1 TJ,TSTG R JL Symbol VDS VGS ID ID.

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Datasheet Details

Part number KRF8910
Manufacturer Guangdong Kexin Industrial
File Size 66.56 KB
Description HEXFET Power MOSFET
Datasheet download datasheet KRF8910 Datasheet

Full PDF Text Transcription (Reference)

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SMD Type HEXFET Power MOSFET KRF8910 IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Ta = 25 Continuous Drain Current,VGS @ 10V TC = 70 Pulsed Drain Current *1 Maximum Power Dissipation Ta = 25 Maximum Power Dissipation Ta = 70 Linear Derating Factor Operating Junction and Storage Temperature Range Junction-to-Drain Lead Maximum Junction-to-Ambient *2,3 Single Pulse Avalanche Energy *4 Avalanche Current *1 TJ,TSTG R JL Symbol VDS VGS ID ID IDM PD Rating 20 20 10 8.3 82 2 1.3 0.016 -55 to + 150 20 62.5 19 8.2 Unit V A W /W /W mJ A R JA EAS IAR *1 Repetitive rating; pulse width limited by max. junction temperature. *2 when mounted on 1 inch square copper board.