High Ft High breakdown voltage Small reverse transfer capacitance excellent high-frequency characteristic Adoption of FBET prccess
Absolute Maximum Ratings Ta = 25
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Collector Current (pulse) Collector Dissipation Junotion Temperature storage Temperature.
Mounted on ceramic board (250mm X0.8mm)
2
Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg
Rating 200 200 4 100 200 500 1.3 150 -55 to 150
Unit V V V.
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SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors 2SC4080
Features
High Ft High breakdown voltage Small reverse transfer capacitance excellent high-frequency characteristic Adoption of FBET prccess
Absolute Maximum Ratings Ta = 25
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Collector Current (pulse) Collector Dissipation Junotion Temperature storage Temperature *Mounted on ceramic board (250mm X0.8mm)
2
Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg
Rating 200 200 4 100 200 500 1.3 150 -55 to 150
Unit V V V mA mA mA W
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2SC4080 Datasheet
