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SMD Type
NPN Silicon Epitaxial Transistor 2SC3632-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.2 9.70 -0.2
High speed tf
0.5ìs
+0.1 0.80-0.1
+0.15 0.50 -0.15
High voltage VCEO=600V
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current *1 Collector current Total power dissipation Junction temperature Storage temperature *1 pw 10ms,Duty cycle 50%
www.DataSheet4U.com *2 when mounted on ceramic substrate of 7.5cm2X0.
2SC3632-Z Datasheet
