Rectron Semiconductor 2SC3632
Silicon NPN Power Transistor
| Part No. | 2SC3632 |
|---|---|
| Datasheet | 2SC3632 Download |
| Manufacturer |  Rectron Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
FEATURES
1. High Collector-Emitter Voltage 2. Low collector saturation voltage 3. 100% avalanche tested Marking code˖2SC3632˄-Z˅ TO-251 TO-252 2SC3632 2SC3632Z 1˖Base 2˖Collector 3˖Emitter Maximum ratings(Ta=25ć unless otherwise noted) Parameter Symbol Value Unit Collector-Base Breakdown Voltage VCBO 600 V Collector-Emitter Breakdown Voltage VCEO 600 V Emitter-Base Breakdown Voltage VEBO 7 V Collector Current IC 1 A Collector Power Dissipation PC 2 W Junction Temperature TJ 150 ć Storage Temperature Tstg -55~150 ćELECTRICAL CHARACTERISTICS
(Ta=25ć unless otherwise noted) Parameter Symbol Test Condition Min Collector-Base Breakdown Voltage VCBO IC=100uA IE=0 600 Collector-Emitter Breakdown Voltage VCEO IC=1mA IB=0 600 Emitter-Base Breakdown Voltage VEBO IE=-100uA IC=0 7 Collector Cutoff Current ICBO VCB=600V IE=0 Emitter Cutoff Current IEBO VEB=7V IC=0 DC Current Gain HFE(1) VCE=5V IC=100mA 40 HFE(2) VCE=5V IC=500mA 5 Collector-Emitter Saturation Voltage VCE(sat) IC=400mA IB=80mA Base-...
