Inchange Semiconductor 2SC3632
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3632 |
|---|---|
| Datasheet | 2SC3632 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Voltage●Low collector saturation voltage
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High voltage switching.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3632 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 400mA; IB= 80mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 400mA; IB= 80mA ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1NOTE DC Current Gain IC= 100mA; VCE= 5V hFE-2NOTE DC Current Gain NOTE:Pulse test PW≤350us,duty cycle ≤2%● hFE-1 Classifications M L K 30-60 40-80 60-120 IC= 500mA; VCE= 2V 2SC3632 MIN TYP.
