Datasheet Details
| Part number | 2SC3632 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3632-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3632 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3632-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Voltage ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3632 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 400mA;
IB= 80mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 400mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3632 | Silicon NPN Power Transistor | Rectron |
 |
2SC3632-Z | NPN Transistor | NEC |
|
2SC3632-Z | Silicon NPN Power Transistor | Rectron |
 |
2SC3632-Z | NPN Transistor | Guangdong Kexin |
 |
2SC3632-Z | NPN Silicon Epitaxial Transistor | Renesas |
| Part Number | Description |
|---|---|
| 2SC3632-Z | NPN Transistor |
| 2SC3631-Z | NPN Transistor |
| 2SC3621 | NPN Transistor |
| 2SC3642 | NPN Transistor |
| 2SC3675 | NPN Transistor |
| 2SC3676 | NPN Transistor |
| 2SC3677 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |