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2SC3632 - NPN Transistor

General Description

High Collector-Emitter Voltage Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage switching.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Voltage ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3632 isc website：www.iscsemi.