Datasheet Details
| Part number | 2SC3632-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3632-Z-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3632-Z.
| Part number | 2SC3632-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3632-Z-INCHANGE.pdf |
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·With TO-252(DPAK) packaging ·High collector-emitter voltage ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation TJ Junction Temperature 1 A 2.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3632-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 400mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3632-Z | NPN Transistor | NEC |
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2SC3632-Z | Silicon NPN Power Transistor | Rectron |
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2SC3632-Z | NPN Transistor | Guangdong Kexin |
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2SC3632-Z | NPN Silicon Epitaxial Transistor | Renesas |
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2SC3632 | Silicon NPN Power Transistor | Rectron |
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