2SC3632-Z - NPN Transistor

Inchange Semiconductor

General Description

With TO-252(DPAK) packaging High collector-emitter voltage Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage switching.

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2SC3632-Z npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC3632-Z
Manufacturer	Inchange Semiconductor
File Size	191.21 KB
Description	NPN Transistor
Datasheet	2SC3632-Z Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3632-Z DESCRIPTION ·With TO-252(DPAK) packaging ·High collector-emitter voltage ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation TJ Junction Temperature 1 A 2.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.