2SC3631-Z datasheet by Inchange Semiconductor.
| Part number | 2SC3631-Z |
|---|---|
| Datasheet | 2SC3631-Z-INCHANGE.pdf |
| File Size | 185.68 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3631-Z TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=1mA; IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A;.
View 2SC3631-Z datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3631-Z | NPN Transistor | NEC |
 |
2SC3631-Z | SILICON POWER TRANSISTOR | Renesas |
|
2SC3631 | NPN SILICON TRIPLE DIFFUSED TRANSISTOR | NEC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3632 | NPN Transistor |
| 2SC3632-Z | NPN Transistor |
| 2SC3621 | NPN Transistor |
| 2SC3642 | NPN Transistor |
| 2SC3675 | NPN Transistor |
| 2SC3676 | NPN Transistor |
| 2SC3677 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
