2314 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2314 Marking and pin assignment.

H&M Semiconductor

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Datasheet Details

Part number	2314
Manufacturer	H&M Semiconductor
File Size	711.50 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	2314 Datasheet
Additional preview pages of the 2314 datasheet.

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HM2314B N-Channel Enhancement Mode Power MOSFET Description The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.

Published: Apr 12, 2021 |