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HM12N60F - 600V N-Channel MOSFET

This page provides the datasheet information for the HM12N60F, a member of the HM12N60 600V N-Channel MOSFET family.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

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Datasheet preview – HM12N60F

Datasheet Details

Part number HM12N60F
Manufacturer H&M Semiconductor
File Size 316.76 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet HM12N60F Datasheet
Additional preview pages of the HM12N60F datasheet.

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Full PDF Text Transcription

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HM12N60 / HM12N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 12.0A, 600V, RDS(on) = 0.
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