HM180N02 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =185A RDS(ON).

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HM180N02 n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM180N02
Manufacturer	H&M Semiconductor
File Size	370.40 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM180N02 Datasheet

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HM180N02 N-Channel Enhancement Mode Power MOSFET Description The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =185A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.4mΩ @ VGS=2.