HM18DP02Q - P-Channel Enhancement Mode Field Effect Transistor

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM18DP02Q
Manufacturer	H&M Semiconductor
File Size	908.97 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	HM18DP02Q Datasheet
Additional preview pages of the HM18DP02Q datasheet.

Product details

Description

Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -20 V Gate-source Voltage VGS Drain Current B TA=25℃ @ Steady State TA=100℃ @ Steady State ID Drain Current B TA=25℃ @ Steady State TA=70℃ @ Steady State ID Pulsed Drain C

📁 Similar Datasheet

HM18 - EE Style Common-Mode Chokes (ETC)
HM185WX1-400 - TFT LCD (BOE)
HM185WX3-200 - TFT LCD (BOE)
HM185WX3-300 - TFT LCD (BOE)
HM185WX3-400 - TFT LCD (BOE)
HM1-6504883 - 4096 x 1 CMOS RAM (Intersil Corporation)
HM1-6504B883 - 4096 x 1 CMOS RAM (Intersil Corporation)
HM1-6508883 - 1024 x 1 CMOS RAM (Intersil Corporation)

Other Datasheets by H&M Semiconductor

HM180N02 - N-Channel Enhancement Mode Power MOSFET
HM18N20K - N-Channel Enhancement Mode Power MOSFET
HM18N50A - 500V N-Channel MOSFET
HM18N50F - 500V N-Channel MOSFET
HM100N03 - N-Channel Enhancement Mode Power MOSFET
HM100N03D - N-Channel Enhancement Mode Power MOSFET

Published: Jun 30, 2025 |