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HM20N03Q - MOSFET

General Description

The HM20N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =20A RDS(ON) < 12.2mΩ @ VGS=10V RDS(ON) < 20.5mΩ @ VGS=5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM20N03Q Description The HM20N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =20A RDS(ON) < 12.2mΩ @ VGS=10V RDS(ON) < 20.