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HM20N06KA

Manufacturer: H&M Semiconductor

HM20N06KA datasheet by H&M Semiconductor.

HM20N06KA datasheet preview

HM20N06KA Datasheet Details

Part number HM20N06KA
Datasheet HM20N06KA-HMSemiconductor.pdf
File Size 439.17 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM20N06KA page 2 HM20N06KA page 3

HM20N06KA Overview

The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM20N06KA Key Features

  • VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
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HM20N06KA Distributor

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