HM20N03Q
HM20N03Q is MOSFET manufactured by H&M Semiconductor.
Description
The HM20N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =30V,ID =20A RDS(ON) < 12.2mΩ @ VGS=10V RDS(ON) < 20.5mΩ @ VGS=5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Secondary side synchronous rectifier
- High side switch in POL DC/DC converter
100% UIS TESTED!
Schematic diagram DFN 3x3 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN 3x3 EP
Reel Size
- Tape width
- Quantity
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