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HM20P02D - P-Channel Enhancement Mode Power MOSFET

General Description

The +03' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Full PDF Text Transcription for HM20P02D (Reference)

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P-Channel Enhancement Mode Power MOSFET +03' Description The +03' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with...

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ology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.

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