HM20P02Q Datasheet | H&M Semiconductor

P-Channel Enhancement Mode Power MOSFET Description The HM20P02Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V - High power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Motor drive - Load switch - Power management S Schematic diagram Pin Assignment DFN 3.3x3.3 EP top view Package Marking And Ordering Information Device Marking Device Device Package DFN3X3-8L Reel Size Ø330mm Tape width 12mm Quantity 2500...