HM20DN06KA Datasheet | H&M Semiconductor

Dual N-Channel Enhancement Mode Power MOSFET Description The HM20DN06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram HM20DN06KA Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% UIS TESTED! 100% ∆Vds TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package HM20DN06KA HM20DN06KA TO-252-4L Reel Size Tape...