HM20P02D Datasheet | H&M Semiconductor

P-Channel Enhancement Mode Power MOSFET +03' Description The +03' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V - High power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Motor drive - Load switch - Power management S Schematic diagram Marking and pin assignment Package Marking And Ordering Information Device Marking Device Device Package +03'+03' ')1;/ Reel Size Ø330mm Tape width 12mm Quantity 2500...