HM2302DR - N-Channel 20V MOSFET

Product Overview

H&M Semiconductor

Part number	HM2302DR
Manufacturer	H&M Semiconductor
File Size	445.34 KB
Description	N-Channel 20V MOSFET
Datasheet	HM2302DR Datasheet
Additional preview pages of the HM2302DR datasheet.

The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipmen

ES.
RDS(ON)= 270 mΩ @VGS=4.5V.
RDS(ON)= 330 mΩ @VGS=2.5V.
RDS(ON)= 450 mΩ @VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V V.
Th Nov, 2013-Ver1.0 01 .3.
8 1&KDQQHO9'6026)(7 Abs.

Other Datasheets by H&M Semiconductor

Published: Nov 27, 2018 |