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HM2318 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2318 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2318

Datasheet Details

Part number	HM2318
Manufacturer	H&M Semiconductor
File Size	946.15 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2318 Datasheet
Additional preview pages of the HM2318 datasheet.

HM2318 Product details

Description

The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON) ≦40mΩ@VGS=10V.
RDS(ON) ≦65mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.

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Other Datasheets by H&M Semiconductor

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Published: Nov 27, 2018 |