Datasheet4U.com

HM2310 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

📥 Download Datasheet

HM2310 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2310

Datasheet Details

Part number	HM2310
Manufacturer	H&M Semiconductor
File Size	358.74 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2310 Datasheet
Additional preview pages of the HM2310 datasheet.

Product details

Description

The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS =60V,ID =3A RDS(ON).

📁 Similar Datasheet

HM2301 - Digital-output humidity and temperature sensor (Hanwei)
HM2302 - Digital temperature and humidity sensor (ETC)
HM2309 - P-Channel 60V MOSFET (VBsemi)
HM236WU1-100 - TFT LCD (BOE)
HM236WU1-300 - TFT LCD (BOE)
HM236WU1-400 - TFT LCD (BOE)
HM236WU3-100 - TFT LCD (BOE)
HM236WU3-110 - TFT LCD (BOE)

Other Datasheets by H&M Semiconductor

HM2310B - N-Channel Enhancement Mode Power MOSFET
HM2310C - N-Channel Enhancement Mode Power MOSFET
HM2310DR - N-Channel Enhancement Mode Power MOSFET
HM2310PR - N-Channel Enhancement Mode Power MOSFET
HM2312 - N-Channel Enhancement Mode Power MOSFET
HM2312B - N-Channel Enhancement Mode Power MOSFET

Published: Nov 27, 2018 |