Datasheet Details
| Part number | HM2310B |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 690.38 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | HM2310B-HMSemiconductor.pdf |
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Overview: HM2310B N Channel Enhancement Mode MOSFET.
| Part number | HM2310B |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 690.38 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | HM2310B-HMSemiconductor.pdf |
|
|
|
The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high side switching.
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|---|---|---|---|
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