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HM2310B - N-Channel Enhancement Mode Power MOSFET

General Description

The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

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HM2310B N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE l 60V/4.0A, RDS(ON) = 55mΩ @VGS = 10V l 60V/3.0A, RDS(ON) = 60mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design 1.Gate 2.Source 3.