HM2318 Description
The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. .
HM2318 Key Features
- RDS(ON) ≦40mΩ@VGS=10V
- RDS(ON) ≦65mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding
HM2318 Applications
- Power Management in Note book