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HM2318 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: +0 N-Channel 40V(D-S) MOSFET GENERAL.

General Description

The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

  

Key Features

  • RDS(ON) ≦40mΩ@VGS=10V.
  • RDS(ON) ≦65mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

HM2318 Distributor