HM2318
HM2318 is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
- RDS(ON) ≦40mΩ@VGS=10V
- RDS(ON) ≦65mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
40 ±20
Unit V V
Marking and pin Assignment
SOT-23-3L top view
S Schematic diagram
Mar,...
