HM2318D
HM2318D is N-Channel 40V MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM2318D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
- RDS(ON) ≦40mΩ@VGS=10V
- RDS(ON) ≦65mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
±20
DFN2X2-6L bottom view
S Schematic diagram
Unit V V
Mar, 2013-Ver1.0
+0'
N-Channel 40V(D-S) MOSFET
Electrical Characteristics (Tj =25℃ Unless Otherwise Specified)
Symbol STATIC BVDSS VGS(th) IGSS IDSS
Parameter
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance
Diode Forward Voltage
Limit
VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=40V, VGS=0V VGS=10V, ID= 6.0A VGS=4.5V, ID= 3.5A IS=1A
Min Typ Max...
