HM2312 datasheet by H&M Semiconductor.
| Part number | HM2312 |
|---|---|
| Datasheet | HM2312-HMSemiconductor.pdf |
| File Size | 453.94 KB |
| Manufacturer | H&M Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
View all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM2312B | N-Channel Enhancement Mode Power MOSFET |
| HM2310 | N-Channel Enhancement Mode Power MOSFET |
| HM2310B | N-Channel Enhancement Mode Power MOSFET |
| HM2310C | N-Channel Enhancement Mode Power MOSFET |
| HM2310DR | N-Channel Enhancement Mode Power MOSFET |
| HM2310PR | N-Channel Enhancement Mode Power MOSFET |
| HM2314 | N-Channel Enhancement Mode Power MOSFET |
| HM2314B | N-Channel Enhancement Mode Power MOSFET |
| HM2318 | N-Channel Enhancement Mode Power MOSFET |
| HM2318A | N-Channel Enhancement Mode Power MOSFET |
