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HM2312B

Manufacturer: H&M Semiconductor

HM2312B datasheet by H&M Semiconductor.

HM2312B datasheet preview

HM2312B Datasheet Details

Part number HM2312B
Datasheet HM2312B-HMSemiconductor.pdf
File Size 444.13 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM2312B page 2 HM2312B page 3

HM2312B Overview

The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

HM2312B Key Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • Battery protection -Load switch -Power management
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HM2312B Distributor

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