• Part: HM2312B
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 444.13 KB
Download HM2312B Datasheet PDF
H&M Semiconductor
HM2312B
HM2312B is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features - VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V - High power and current handing capability - Lead free product is acquired - Surface mount package S Schematic diagram Marking and pin assignment Application - Battery protection - Load switch - Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package HM2313B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA =25℃ TA =70℃ Drain...