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HM2314B Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM2314B N-Channel Enhancement Mode Power MOSFET.

General Description

The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

General

Key Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 2314 Marking and pin assignment.

More Datasheets from H&M Semiconductor

Part Number Description
HM2314 N-Channel Enhancement Mode Power MOSFET
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HM2312 N-Channel Enhancement Mode Power MOSFET
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HM2314B Distributor