Datasheet4U.com

HM2310C - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

📥 Download Datasheet

HM2310C N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2310C

Datasheet Details

Part number	HM2310C
Manufacturer	H&M Semiconductor
File Size	687.54 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2310C Datasheet
Additional preview pages of the HM2310C datasheet.

Product details

Description

The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

📁 Similar Datasheet

HM2310 - N-Channel 60V MOSFET (VBsemi)
HM2301 - Digital-output humidity and temperature sensor (Hanwei)
HM2302 - Digital temperature and humidity sensor (ETC)
HM2302 - N-Channel MOSFET (VBsemi)
HM2309 - P-Channel 60V MOSFET (VBsemi)
HM236WU1-100 - TFT LCD (BOE)
HM236WU1-300 - TFT LCD (BOE)
HM236WU1-400 - TFT LCD (BOE)

Other Datasheets by H&M Semiconductor

HM2310 - N-Channel Enhancement Mode Power MOSFET
HM2310B - N-Channel Enhancement Mode Power MOSFET
HM2310DR - N-Channel Enhancement Mode Power MOSFET
HM2310PR - N-Channel Enhancement Mode Power MOSFET
HM2312 - N-Channel Enhancement Mode Power MOSFET
HM2312B - N-Channel Enhancement Mode Power MOSFET

Published: Nov 27, 2018 |