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HM2312B - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2312B N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2312B

Datasheet Details

Part number	HM2312B
Manufacturer	H&M Semiconductor
File Size	444.13 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2312B Datasheet
Additional preview pages of the HM2312B datasheet.

Product details

Description

The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2312 Marking and pin assignment.

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Published: Nov 27, 2018 |