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HM2312B Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM2312B N-Channel Enhancement Mode Power MOSFET.

General Description

The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

General

Key Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 2312 Marking and pin assignment.

More Datasheets from H&M Semiconductor

Part Number Description
HM2312 N-Channel Enhancement Mode Power MOSFET
HM2310 N-Channel Enhancement Mode Power MOSFET
HM2310B N-Channel Enhancement Mode Power MOSFET
HM2310C N-Channel Enhancement Mode Power MOSFET
HM2310DR N-Channel Enhancement Mode Power MOSFET
HM2310PR N-Channel Enhancement Mode Power MOSFET
HM2314 N-Channel Enhancement Mode Power MOSFET
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HM2312B Distributor