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HM2310DR - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2310DR N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2310DR

Datasheet Details

Part number	HM2310DR
Manufacturer	H&M Semiconductor
File Size	521.09 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2310DR Datasheet
Additional preview pages of the HM2310DR datasheet.

Product details

Description

The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS =60V,ID =5A RDS(ON).

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Published: Jul 1, 2025 |