Datasheet4U Logo Datasheet4U.com

HM2310DR - N-Channel Enhancement Mode Power MOSFET

General Description

The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS =60V,ID =5A RDS(ON).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM2310 N-Channel 60V MOSFET VBsemi
HM2301 Digital-output humidity and temperature sensor Hanwei
HM2302 Digital temperature and humidity sensor ETC
HM2302 N-Channel MOSFET VBsemi
HM2309 P-Channel 60V MOSFET VBsemi

Other Datasheets by H&M Semiconductor

Part Number Description
HM2310 N-Channel Enhancement Mode Power MOSFET
HM2310B N-Channel Enhancement Mode Power MOSFET
HM2310C N-Channel Enhancement Mode Power MOSFET
HM2310PR N-Channel Enhancement Mode Power MOSFET
HM2312 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =5A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.