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HM2310PR - N-Channel Enhancement Mode Power MOSFET

General Description

The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other switching application.

VDS =60V,ID =4.0A RDS(ON)

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M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =4.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.