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HM2314B - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2314B N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2314B

Datasheet Details

Part number	HM2314B
Manufacturer	H&M Semiconductor
File Size	474.68 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2314B Datasheet
Additional preview pages of the HM2314B datasheet.

Product details

Description

The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2314 Marking and pin assignment.

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Published: Nov 27, 2018 |