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HM2312 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2312 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2312

Datasheet Details

Part number	HM2312
Manufacturer	H&M Semiconductor
File Size	453.94 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2312 Datasheet
Additional preview pages of the HM2312 datasheet.

Product details

Description

The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2312 Marking and pin assignment.

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Published: Nov 27, 2018 |