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HM25N06Q - MOSFET

General Description

The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

can be used in a wide variety of applications.

Key Features

  • VDS >60V,ID =25A RDS(ON) < 20mΩ @ VGS=10V （Typ:18mΩ）.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.