Datasheet4U Logo Datasheet4U.com

HM25P03K - P-Channel Enhancement Mode Power MOSFET

Description

The HM25P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VDS = -30V,ID = -25A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – HM25P03K

Datasheet Details

Part number HM25P03K
Manufacturer H&M Semiconductor
File Size 840.03 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM25P03K Datasheet
Additional preview pages of the HM25P03K datasheet.

📁 Similar Datasheet

Other Datasheets by H&M Semiconductor
  • HM25P03D - P-Channel Enhancement Mode Power MOSFET
  • HM25P03Q - P-Channel Enhancement Mode Power MOSFET
  • HM25P04K - P-Channel Enhancement Mode Power MOSFET
  • HM25P06 - P-Channel Enhancement Mode Power MOSFET
  • HM25P06D - P-Channel Enhancement Mode Power MOSFET
  • HM25P15 - P-Channel Enhancement Mode Power MOSFET
  • HM25P15K - P-Channel Enhancement Mode Power MOSFET
  • HM250N03A - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM25P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -25A RDS(ON) < 35mΩ @ VGS=-4.
Published: |