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HM25P03Q - P-Channel Enhancement Mode Power MOSFET

Description

The H034 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • V S = -30V,I = -25A D D RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – HM25P03Q

Datasheet Details

Part number HM25P03Q
Manufacturer H&M Semiconductor
File Size 517.40 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM25P03Q Datasheet
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Full PDF Text Transcription

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+034 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The H034 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● V S = -30V,I = -25A D D RDS(ON) < 35mΩ @ VGS=-4.
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