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HM2N15R - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2N15R N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2N15R

Datasheet Details

Part number	HM2N15R
Manufacturer	H&M Semiconductor
File Size	474.08 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2N15R Datasheet
Additional preview pages of the HM2N15R datasheet.

Product details

Description

The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Nov 27, 2018 |