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HM3207B - N-Channel Enhancement Mode Power MOSFET

General Description

The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

Key Features

  • VDSS =70V,ID =180A RDS(ON) < 4mΩ @ VGS=10V.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram HM3207B.

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HM3207B N-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.