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HM3207D - N-Channel Enhancement Mode Power MOSFET

General Description

The +0' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

Key Features

  • VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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+0' N-Channel Enhancement Mode Power MOSFET Description The +0' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.