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HM3400KR - N-Channel 30V MOSFET

General Description

The HM3400KR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipmen

Key Features

  • ES.
  • RDS(ON)= 450 mΩ @VGS=4.5V.
  • RDS(ON)= 550 mΩ @VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding DSC N-Channel 3D 3400 G1 2S Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 30 ±10 Unit V V.
  • Th Nov, 2013-Ver1.0.

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Full PDF Text Transcription for HM3400KR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM3400KR. For precise diagrams, and layout, please refer to the original PDF.

HM3400KR N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The HM3400KR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell d...

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ent mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● FEATURES ● RDS(ON)= 450 mΩ @VGS=4.5V ● RDS(ON)= 550 mΩ @VGS=2.

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