HM3400KR - N-Channel 30V MOSFET

Product Overview

H&M Semiconductor

Part number	HM3400KR
Manufacturer	H&M Semiconductor
File Size	832.85 KB
Description	N-Channel 30V MOSFET
Datasheet	HM3400KR Datasheet
Additional preview pages of the HM3400KR datasheet.

The HM3400KR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipmen

ES.
RDS(ON)= 450 mΩ @VGS=4.5V.
RDS(ON)= 550 mΩ @VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC N-Channel 3D 3400 G1 2S Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 30 ±10 Unit V V.
Th Nov, 2013-Ver1.0.

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Published: Jul 1, 2025 |