HM3801D - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM3801D
Manufacturer	H&M Semiconductor
File Size	677.11 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM3801D Datasheet
Additional preview pages of the HM3801D datasheet.

The HM3801D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

VDS = -30V,ID = -4.6A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

HM3-6514-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
HM3-6514B-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
HM3-6514S-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
HM3-65764 - High Speed CMOS SRAM (Matra Design Semiconductor)
HM3-65787 - High Speed CMOS SRAM (Matra Design Semiconductor)
HM3-65788 - High Speed CMOS SRAM (Matra Design Semiconductor)
HM3-65789 - High Speed CMOS SRAM (Matra Design Semiconductor)
HM3-7603 - (HM3-7602) 32 x 8 PROM (Harris)
HM3-7610 - (HM3-7610 / HM3-7611) High Speed 256 X 4 PROM (Harris Semiconductor)
HM3-7611 - (HM3-7610 / HM3-7611) High Speed 256 X 4 PROM (Harris Semiconductor)

Other Datasheets by H&M Semiconductor

Published: Jul 1, 2025 |