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HM3808 - N-Channel MOSFET

General Description

HM3808 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM3808 Device HM3808 Device Package TO-220-3L Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Quantity - 

Key Features

  • VDSS=80V／VGSS=±25V／ID=150A RDS(ON)=5mΩ(max. )@VGS=10V.
  • Low Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology .

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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+0 9'6／“9*6／$ ,'  1&KDQQHO(QKD QFHPHQW 0RGH026)(7 Features  VDSS=80V／VGSS=±25V／ID=150A RDS(ON)=5mΩ(max.)@VGS=10V  Low Dense Cell Design  Reliable and Rugged  Advanced trench process technology  Applications  Synchronous Rectification  Power Management in Inverter System Switching Time Test Circuit and Waveforms Pin Description HM3808 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM3808 Device HM3808 Device Package TO-220-3L Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.