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HM3N90I Datasheet Silicon N-channel Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM3N90I Silicon N-Channel Power MOSFET General.

General Description

: VDSS 900 HM3N90I, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-251, which accords with the RoHS standard.

Key Features

  • z Fast Switching z Low ON Resistance(Rdson≤5.5Ω) z Low Gate Charge (Typical Data:16nC) z Low Reverse transfer capacitances(Typical:6.5pF) z 100% Single Pulse avalanche energy Test.

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