HM3N90I - Silicon N-Channel Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM3N90I
Manufacturer	H&M Semiconductor
File Size	792.42 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HM3N90I Datasheet
Additional preview pages of the HM3N90I datasheet.

Product details

Description

VDSS 900 HM3N90I, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

z Fast Switching z Low ON Resistance(Rdson≤5.5Ω) z Low Gate Charge (Typical Data:16nC) z Low Reverse transfer capacitances(Typical:6.5pF) z 100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |