HM3N90F
Description
：
VDSS
HM3N90F, the silicon N-channel Enhanced VDMOSFET,
3 is obtained by the self-aligned planar Technology which reduce
PD(TC=25℃)
30 the conduction loss, improve switching performance and
RDS(ON)Typ
4.7 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15n C) l Low Reverse transfer capacitances(Typical:5p F) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy...
