HM3N90F Overview
： VDSS 900 HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.7 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS...