Silicon N-channel Power MOSFET
| Part number | HM3N90I |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 792.42 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | HM3N90I-HMSemiconductor.pdf |
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： VDSS 900 HM3N90I, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
See all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM3N90F | Silicon N-Channel Power MOSFET |
| HM3N10 | N-Channel Enhancement Mode Power MOSFET |
| HM3N10AMR | N-Channel Enhancement Mode Power MOSFET |
| HM3N10MR | N-Channel Enhancement Mode Power MOSFET |
| HM3N10PR | N-Channel Enhancement Mode Power MOSFET |
| HM3N150A | silicon N-channel Enhanced VDMOSFET |
| HM3N20PR | 200V N-Channel Enhancement Mode MOSFET |
| HM3N30R | Silicon N-Channel Power MOSFET |
| HM3N40PR | Silicon N-Channel Power MOSFET |
| HM3N80 | Silicon N-Channel Power MOSFET |
