HM3N90I
Description
：
VDSS
HM3N90I, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
75 which reduce the conduction loss, improve switching
RDS(ON)Typ
5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the Ro HS standard.
Features
： z Fast Switching z Low ON Resistance(Rdson≤5.5Ω) z Low Gate Charge (Typical Data:16n C) z Low Reverse transfer capacitances(Typical:6.5p F) z 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy...
